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This paper presents an ultra-wideband (UWB) medium power amplifier (MPA) and a broadband high-power power amplifier (HPA) operating at the 5G/6G frequency bands. By using <tex-math notation="LaTeX">0.15~μ m </tex-math> GaAs pseudomorphic high electron mobility transistor (pHEMT) technology process, the proposed UWB MPA delivers an average small-signal gain of 16.5 dB, a saturation output power ( <tex-math notation="LaTeX">Pₛₐₜ </tex-math> ) of 24 dBm, and a peak power-added efficiency (PAE) over 24% from 24 to 38 GHz with a chip area of <tex-math notation="LaTeX">2×1 </tex-math> mm2. The broadband HPA demonstrates a 17-dB average small-signal gain, 29-dBm <tex-math notation="LaTeX">Pₛₐₜ </tex-math> , and a PAE over 28% from 24 to 32 GHz with a <tex-math notation="LaTeX">2.4×1.1 </tex-math> mm2 chip size. The measurement results have demonstrated the great potential of the proposed PA for 5G/6G millimeter-wave applications.
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Fu et al. (2024) studied this question.
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