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Investigate the resistive switching mechanisms and biological synaptic emulation capabilities of nickel oxide memristors prepared using a solution combustion process.

July 11, 2018ACS Applied Materials & Interfaces

Analog and Digital Bipolar Resistive Switching in Solution-Combustion-Processed NiO Memristor

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Investigate the resistive switching mechanisms and biological synaptic emulation capabilities of nickel oxide memristors prepared using a solution combustion process.
Synthesized p-type nickel oxide (NiO) thin films via a solution combustion method and formed NiO/Ag junctions.
Assessed electrical switching behaviors and synaptic learning functions under variable bias voltages before and after electroforming.
Prior to electroforming, local oxygen ion migration modulated the Schottky barrier at the NiO/Ag interface, enabling analog switching and key synaptic functions such as spike-rate-dependent plasticity.
Post-electroforming under high bias voltage induced digital bipolar switching governed by the formation and rupture of conductive oxygen vacancy filaments.

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Implication

Experimental analysis reveals voltage-dependent analog and digital switching in solution-processed nickel oxide memristors, suggesting simplified fabrication for neuromorphic electrocircuits.

Cite This Study

Li et al. (2018) studied this question.

synapsesocial.com/papers/69dcdf5b7bac7cd71d1333e6 https://doi.org/10.1021/acsami.8b05749

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Implication

Experimental analysis reveals voltage-dependent analog and digital switching in solution-processed nickel oxide memristors, suggesting simplified fabrication for neuromorphic electrocircuits.

Analog and Digital Bipolar Resistive Switching in Solution-Combustion-Processed NiO Memristor

Key Points

Discussion

Implication

Cite This Study

Analog and Digital Bipolar Resistive Switching in Solution-Combustion-Processed NiO Memristor

Key Points

Discussion

Implication

Cite This Study

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