Experimental study demonstrates dual-mode resistive switching in silver nickel hydroxide memristors, suggesting guidelines for reconfigurable neuromorphic devices.
Nickel hydroxide [Ni(OH) 2 ] thin films were synthesized by a solution process and characterized by x-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and time-of-flight secondary-ion mass spectrometry. Unlike nickel oxide (NiO) memristors, which exhibit only nonvolatile memory properties, the Ag/Ni(OH) 2 /Pt memristor can be operated in volatile-threshold resistive-switching mode with the compliance current ( I cc ) varying from 10 nA to 100 μ A. When I cc exceeds 1 mA, the nonvolatile switching mode is triggered. The resistive-switching mechanism of Ag ion diffusion in Ni(OH) 2 is discussed by combining experimental analysis and density functional theory calculations. The results provide a useful guideline for designing volatile-threshold memristor.
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Fan et al. (2020) studied this question.
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