Promoted high temperature carrier mobility and thermoelectric performance of InTe enabled by altering scattering mechanism

This is the authors' abstract. We don't add key points for this paper.

Sb nano-precipitates, which serve to alter the vibrational frequency of localized phonon modes that facilitate inter-valley scattering, emerge in pristine InTe after addition of Sb. As a result, exponentially declined carrier mobility is promoted by nearly 50% at 723 K in InTe–Sb0.01, leading to enhanced thermoelectric performance.