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We report on the growth of thin films of yttrium iron garnet (YIG) on dielectric substrates. Such films have historically been challenging to grow due to either cracking or incomplete crystallization of the films. We have established the proper growth parameters by tuning seed layer thickness to an optimum of 45 nm. These films were then used as seed layers for growth of films of Bi:YIG and Ce:YIG. Bi:YIG films show a Faraday rotation of 1700 °/cm, and Ce:YIG films show a Faraday rotation of 3700 °/cm.
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Block et al. (2014) studied this question.
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