Experimental study demonstrates enhanced electrical performance in dual-gate pentacene transistors using nanoassembled silicon dioxide, suggesting low-cost routes for flexible electronic devices.
In this paper, we report the fabrication of dual-gate organic field-effect transistors (OFETs) using self-assembled SiO2 and thermal oxide as gate dielectric materials and pentacene as a semiconductor. The top dielectric layer was formed by the low-cost and low-temperature self-assembly with SiO2 nanoparticles 45nm in diameter. The fabricated dual-gate pentacene field-effect transistor (FET) has a threshold voltage of −2.2V, a field-effect mobility of 0.1cm2∕Vs, an Ion∕off ratio of 3.8×103, and a slope of 1.3V∕decade. Compared to a single gate OFET, dual-gate FET has better performance with higher drain output current at the relatively low operating voltage, larger field-effect mobility, and better channel controllability by separately adjusting two gate biases.
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Cui et al. (2005) studied this question.
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