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January 1, 2014Journal of Materials Chemistry COpen Access

Thickness dependence of the piezoresistive effect in p-type single crystalline 3C-SiC nanothin films

Hoang‐Phuong Phan Dzung Viet Dao Philip Tanner Jisheng Han Nam‐Trung Nguyen Sima Dimitrijev Glenn Walker Li Wang Yong Zhu

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Abstract

The influence of crystal defects on the gauge factor of p-type single crystalline 3C-SiC thin films is reported.

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Phan et al. (2014) studied this question.

synapsesocial.com/papers/69dd78e29a26440201101020 https://doi.org/10.1039/c4tc01054j

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Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1Review: Semiconductor Piezoresistance for MicrosystemsReview · 2009 · 953 citations
2P-type 3C-SiC nanowires and their optical and electrical transport propertiesOriginal Research · 2011 · 75 citations
3Silicon carbide MEMS for harsh environmentsReview · 1998 · 464 citations
4Highly sensitive piezoresistance behaviors of n-type 3C-SiC nanowiresOriginal Research · 2013 · 53 citations
5Piezoresistance behaviors of p-type 6H-SiC nanowiresOriginal Research · 2011 · 66 citations

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