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August 10, 2010IEEE Transactions on Electron Devices

Impact Ionization in InAs Electron Avalanche Photodiodes

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Authors

AMAndrew MarshallLancaster University GhanaJDJ.P.R. DavidUniversity of SheffieldCTChee Hing TanUniversity of Sheffield

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Marshall et al. (2010) studied this question.

synapsesocial.com/papers/69deb6717702a00918b0c8d2https://doi.org/10.1109/ted.2010.2058330
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  1. 1Thresholds of impact ionization in semiconductors1992 · 195 citations
  2. 2Influence of impact ionization on the drain conductance in InAs-AlSb quantum well heterostructure field-effect transistors1995 · 77 citations
  3. 3Monte Carlo simulations of Hg0.7Cd0.3Te avalanche photodiodes and resonance phenomenon in the multiplication noise2003 · 49 citations
  4. 4Noise and Multiplication Measurements in InSb Avalanche Photodiodes1967 · 48 citations
  5. 5Effect of dead space on the excess noise factor and time response of avalanche photodiodes1990 · 103 citations