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December 1, 1995IEEE Electron Device Letters

Influence of impact ionization on the drain conductance in InAs-AlSb quantum well heterostructure field-effect transistors

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Authors

BBB. BrarTeledyne Technologies (United States)HKH. KroemerUniversity of California, Santa Barbara

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Brar et al. (1995) studied this question.

synapsesocial.com/papers/6a8917ee8513b156087b492ehttps://doi.org/10.1109/55.475583
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Thresholds of impact ionization in semiconductors1992 · 198 citations
  2. 2Impact ionization and light emission in AlGaAs/GaAs HEMT's1992 · 80 citations
  3. 3High-breakdown-voltage AlSbAs/InAs n-channel field-effect transistors1992 · 28 citations
  4. 4Analysis of kink characteristics in Silicon-on-insulator MOSFET's using two-carrier modeling1985 · 105 citations
  5. 5Drastic reduction of gate leakage in InAlAs/InGaAs HEMT's using a pseudomorphic InAlAs hole barrier layer1994 · 26 citations