Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
May 1, 1987IEEE Electron Device Letters

Parasitic bipolar effects in submicrometer GaAs MESFET's

View Full Paper
Ask AI
Bookmark
Share

Authors

BZBart J. Van ZeghbroeckUniversity of Colorado BoulderWPW. PatrickIBM (United States)HMH. P. MeierUniversity of Stuttgart

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Zeghbroeck et al. (1987) studied this question.

synapsesocial.com/papers/6a7cdc9d4fd5c1e90ea1e3cchttps://doi.org/10.1109/edl.1987.26598
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Analysis of kink characteristics in Silicon-on-insulator MOSFET's using two-carrier modeling1985 · 105 citations
  2. 2Power-limiting breakdown effects in GaAs MESFET's1981 · 125 citations
  3. 3Very short gate-length GaAs MESFET's1985 · 36 citations
  4. 4Buried p-layer SAINT for very high-speed GaAs LSI's with submicrometer gate length1985 · 68 citations
  5. 5Scaled GaAs MESFET's with gate length down to 100 nm1986 · 15 citations