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August 1, 1994IEEE Electron Device Letters

Impact ionization in InAlAs/InGaAs HFET's

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Authors

AMAkbar A. MooljiMassachusetts Institute of TechnologySBS.R. BahlTexas Instruments (United States)JAJesús A. del AlamoOncovision (Spain)

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Moolji et al. (1994) studied this question.

synapsesocial.com/papers/6a92c12787bb163ace62326ehttps://doi.org/10.1109/55.296227
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Also Consider

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  4. 4Band offset transitivity at the InGaAs/InAlAs/InP(001) heterointerfaces1991 · 70 citations