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A tutorial review on the modulation-doped field-effect transistor (MODFET) and its application to ultra-low-noise, medium-power, and ultra-wide-band traveling-wave amplifiers as well as ultra-high-speed digital logic circuits is presented. It is believed that with further advances in material growth and device scaling significant improvements in cutoff frequencies, switching speed, noise, and power will be achieved in the near future.>
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Nguyen et al. (1992) studied this question.
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