We have grown pseudomorphic modulation-doped Aly Ga1−y As (0.25≤y≤0.30)/Inx Ga1−xAs (x≤0.50) on GaAs structures by molecular-beam epitaxy and obtained two-dimensional electron gas densities as high as 2.6×1012/cm2 with mobilities of 6600 and 14 900 cm2/V s at 300 and 77 K, respectively. In conjunction with this work, Rutherford backscattering measurements were made to study the substrate temperature dependence of In incorporation. Cross-section transmission electron microscopy (TEM) measurements were made to determine layer morphology (planar versus island growth) as a function of substrate temperature and composition. Dislocation density as a function of InGaAs layer thickness was studied using plan-view TEM. Hall measurements are consistent with the composition, morphology, and structural measurements of the material and indicate that there is a limited composition-dependent thickness and temperature range over which both InGaAs and AlGaAs of high quality can be grown.
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Fischer-Colbrie et al. (1988) studied this question.