Raman scattering, photoluminescence, and electron paramagnetic resonance were studied at room and cryogenic temperatures in (Ga,Mn)As nanowires with a high concentration of Mn atoms grown by low-temperature molecular beam epitaxy on GaAs substrates with crystallographic orientation (111). Optical methods confirmed the possibility to grow nanowires of high crystalline quality based on magnetic semiconductor materials of the (Ga,Mn)As type.
Zaitsev et al. (Sun,) studied this question.