Homogeneous nanosheet single quantum well on extremely thin silicon-on-insulator technology

This study introduces a new concept of the quantum well formed on the homogeneous silicon nanosheet by the charged oxide walls. The “homogeneous nanosheet single quantum well” (HNSQW), sandwiched by the fixed charges originated from the oxides, forms homogeneous band well without any heterostructures. The HNSQW is available on extremely thin silicon-on-insulator technology, and numerical simulation verified the concept of this new idea. The numerical simulation revealed that the HNSQW neglects the doping type and forms the single-side QW region on either the conduction (negative fixed charge) and the valence (positive fixed charge) band. When the silicon layer thickness is thin enough, the HNSQW structure provides the increased on-current and minimized off-current, respectively, and its PN-junction is advantageous in terms of the low on-resistance and minimized leak current. State-of-the-art field-effect-transistors (FETs) of gate-all-around and complementary FET contain the similar structure within the channel region; therefore, the knowledge found in this study will be effective for further shrinking of FETs.