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In this letter, we present a compact model of NAND flash memory strings for circuit simulation purposes. This model is modular and easy to be implemented, and its parameters can be extracted through a simple procedure. It allows accurate simulation of NAND flash memories with a limited computational effort, taking into account capacitive coupling effects which will become extremely important in future technology generations. This model is a very valuable tool for IC designers to optimize NVM circuits, particularly in multilevel applications.
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Larcher et al. (2008) studied this question.
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