345-MW/cm² 2608-V NO₂ p-Type Doped Diamond MOSFETs With an Al₂O₃ Passivation Overlayer on Heteroepitaxial Diamond

Diamond metal oxide semiconductor field effect transistors (MOSFETs) on high-quality heteroepitaxial diamond (Kenzan diamond ® ) with NO 2 p-type doping and an Al 2 O 3 passivation overlayer exhibited a high off-state breakdown voltage of −2608 V. The 100-nm-thick Al 2 O 3 passivation overlayer on the hole channel increased the high-voltage-handling capability of the MOSFETs by substantially suppressing the off-state drain leakage currents. The MOSFET showed a specific on-resistance of 19.74 <tex-math notation="LaTeX">mΩ · </tex-math> cm 2 and a maximum drain current density of −288 mA/mm, with an extremely low gate leakage current <tex-math notation="LaTeX">< 10^-6 </tex-math> mA/mm. The Baliga’s Figure-Of-Merits was experimentally determined to be 344.6 MW/cm 2 , and the maximum DC power density was observed to be 21.0 W/mm.