Utility of impedance mapping to delineate atrial septal occluders during catheter ablation

Figures

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  Figure 1. Rim and disk characteristics on the right atrial side in case 2. Representative electroanatomic data acquired on the right atrial side of the ASO in case 2. No apparent difference in bipolar voltage (1.03 and 0.67 mV) is observed between the rim (A) and disk (B) regions; however, generator impedance is lower on the disk surface (113 and 80 Ω), illustrating the ability of impedance mapping to differentiate device-related properties. Contact force was comparable between the two recordings. ASO = atrial septal occlude; Imp = impedance; RA = right atrium.

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  Figure 2. Voltage and impedance mapping of atrial septal occluder devices. Panels A–C correspond to cases 1–3. For each case, preprocedural imaging is shown in the left column, followed by representative bipolar voltage maps and a generator-impedance map acquired using the multielectrode catheter and RF ablation catheter. Bipolar voltage maps demonstrate heterogeneous and fragmented low-amplitude distributions over the occluder surface, whereas generator-impedance maps delineate a contiguous region closely matching the expected device footprint. CT = computed tomography; LA = left atrium; RA = right atrium.