Material and optical characterizations have been conducted for epitaxially grown Ge1−xSnx thin films on Si with Sn composition up to 10%. A direct bandgap Ge0.9Sn0.1 alloy has been identified by temperature-dependent photoluminescence (PL) study based on the single peak spectrum and the narrow line-width. Room temperature PL emission as long as 2230 nm has also been observed from the same sample.
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Ghetmiri et al. (2014) studied this question.
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