January 16, 1995

Thermal dependence of the refractive index of GaAs and AlAs measured using semiconductor multilayer optical cavities

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Abstract

The longitudinal optical mode shift with temperature was measured in two vertical cavity surface-emitting laser (VCSEL) type optical resonators with different GaAs and AlAs layer structures. The measurements show distinct differences in the behavior of the cavities. From the data the thermal dependencies of the indices of refraction of GaAs and AlAs for wavelengths near 1 μm were determined to be (2.67±0.07)×10−4/°C and (1.43±0.07)×10−4/°C, respectively.

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Talghader et al. (Mon,) studied this question.

synapsesocial.com/papers/6a02d188bc3ffe278e6528c1 https://doi.org/https://doi.org/10.1063/1.114204

Also Consider

Synapse has enriched one closely related paper. Consider it for comparative context:

1<i>Optical Waves in Layered Media</i>1990 · 2,274 citations

Also Consider

Synapse has enriched one closely related paper. Consider it for comparative context:

1<i>Optical Waves in Layered Media</i>1990 · 2,274 citations