The temperature dependence of electrical conductivity of rf-sputtered amorphous Ge, Si, and Ge-Si films as functions of annealing temperature and time have been investigated for 350T77 K. Annealing shifts the hopping region to lower temperatures. We find that reasonable values of Mott's parameters are obtained only for properly annealed specimens in the true hopping-conduction region.
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Paul et al. (1973) studied this question.
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