We have fabricated a high-density 1.5-μm quantum dot photodetector for advanced optical fiber communications and have found unique optical properties, including avalanche multiplication. The structure of the absorption layer had stacked InAs/InGaAlAs layers with a high density of 1 × 10 12 cm -2 , which consisted of strained 1.5-μm InAs quantum dots and a strain compensation layer of InGaAlAs. A three times larger absorption coefficient than the InGaAs layer, an avalanche multiplication effect, and a low dark current are reported with InAs quantum dot conditions.
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Umezawa et al. (2014) studied this question.
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