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March 20, 2017Applied Physics LettersOpen Access

On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices

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Authors

LELoizos EfthymiouUniversity of CambridgeGLGiorgia LongobardiTeraView (United Kingdom)GCGianluca CamusoUniversity of Cambridge

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Efthymiou et al. (2017) studied this question.

synapsesocial.com/papers/6a033b74f1675f581a756e93https://doi.org/10.1063/1.4978690
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