Simultaneous Substrate Debonding and Device Annealing of Flexible a‐IGZO Thin‐Film Transistors on Colorless Polyimide via Single‐Shot Xenon Flash Lamp Irradiation

This study demonstrates a single-step xenon flash lamp debonding (XFLD) process that simultaneously enables mechanical release and ultrafast annealing of high-performance amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) on colorless polyimide (CPI). Rapid photothermal absorption by a Molybdenum (Mo) light-absorption layer (LAL) induces instantaneous CPI decomposition for clean debonding from glass carriers, while concurrently providing sufficient thermal activation to enhance device performance. Following XFLD, the TFTs exhibit increased drain current, a positive threshold voltage shift, and reduced off current, indicating effective channel activation. Hydrogen diffusion from the CPI passivates oxygen-vacancy-related defects in the a-IGZO layer, improving carrier transport and operational stability. Spectroscopic analyses confirm reduced vacancy states and reinforced C─Cl bonding in the polymer gate dielectric without chemical damage. The resulting devices show excellent transparency and maintain stable characteristics over 1000 bending cycles. Overall, the scalable XFLD process offers a promising route for integrating substrate debonding and ultrafast thermal activation in high-performance flexible and wearable electronics.