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Identifies conductive filament properties affecting resistive memory operations, suggesting implications for device optimization.
By combining electrical, physical, and transport/atomistic modeling results, this study identifies critical conductive filament features controlling TiN/HfO 2 /TiN resistive memory operations. The forming process is found to define the filament geometry, which in turn determines the temperature profile and, consequently, the switching characteristics. The findings point to the critical importance of controlling filament dimensions during the forming process (polarity, max current/voltage, etc.).
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Bersuker et al. (2010) studied this question.
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