Long-Endurance Nanocrystal TiO₂ Resistive Memory Using a TaON Buffer Layer

Using nanocrystal (nc) TiO 2 and TaON buffer layer, the Ni/GeO x /nc-TiO 2 /TaON/TaN resistive random access memory (RRAM) showed forming-free resistive switching, self compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, and long 10 10 cycling endurance. The very long endurance in this novel RRAM may create new applications beyond Flash memory.