Al/CeOₓ/Ptdevices with nonstoichiometricCeOₓ\ (1.5 ≪ x ≪ 2)films were fabricated. The unique resistive switching (RS) behaviors for resistive random access memory applications, including stable and sharp bipolar RS processes and a multilevel and self-stop set process without current compliance and without excessive requirement on a high-voltage electroforming process, were demonstrated. A multifilament switching model based on the distribution characteristics of oxygen vacancies inCeOₓfilms is proposed to explain the observed RS behaviors.
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Sun et al. (2009) studied this question.
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