Unified Steep‐Slope Switching and Non‐Volatile Memory in a Complementarily Stabilized van der Waals Ferroelectric Transistor

s), and endurance exceeding 2500 cycles. The device further performs AND, OR, and majority logic-in-memory operations using 10 µs pulses with clear ON/OFF separation. These results establish the FeNC-FET as a compact platform that combines steep-slope switching with non-volatile programmability in a single device, enabling low-bias readout, short-pulse programming, and robust logic-in-memory operation.