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Hafnium oxide-based ferroelectric field-effect transistors (FeFETs) demonstrate superior integration potential, high speed, and low power consumption, establishing them as a highly viable cornerstone technology for next-generation storage-class memory and compute-in-memory applications. Novelty: ClaimNovelty.SYNTHESIS. Consensus alignment: ConsensusAlignment.NEUTRAL.

Hafnium oxide-based ferroelectric field effect transistors: From materials and reliability to applications in storage-class memory and in-memory computing

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