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April 1, 2007Japanese Journal of Applied Physics

High Critical Electric Field Exceeding 8 MV/cm Measured Using an AlGaN p–i–n Vertical Conducting Diode on n-SiC Substrate

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ANAtsushi NishikawaOsaka University of EconomicsKKKazuhide KumakuraHokkaido UniversityTMToshiki MakimōtoWaseda University

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Nishikawa et al. (2007) studied this question.

synapsesocial.com/papers/6a07d11273bf37127155d5e5https://doi.org/10.1143/jjap.46.2316
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