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To be compatible with 3-D vertical crossbar arrays, a TiO 2 /HfO 2 bilayer resistive-switching memory (RRAM) cell sandwiched between Ni electrodes is developed. The proposed device has numerous highly desired features for the implementation of 3-D vertical RRAM, including: stable bipolar resistive switching; forming free; self-compliance; self-rectification; multiple resistance states; and room-temperature process. The resistive switching and current rectification are attributed to oxygen vacancy migration in HfO 2 and potential barrier modulation of the asymmetric TiO 2 /HfO 2 tunnel barrier. The rectification ratio up to 10 3 is capable of realizing a single-crossbar array up to 16 Mb for future high-density storage class memory applications.
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Hsu et al. (2013) studied this question.
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