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A double heterojunction unipolar hot-electron transistor utilizing an AlSb0.92As0.08 emitter and an InAs base can successfully operate at room temperature with a current gain greater than 10 and a current drive capability exceeding 1200 A cm−2. Novelty: ClaimNovelty.NOVEL_FINDING. Consensus alignment: ConsensusAlignment.NEUTRAL.

September 28, 1987Applied Physics Letters

Room-temperature operation of hot-electron transistors

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ALA. F. J. LeviSouthern California University for Professional Studies TCT. H. ChiuASML (United States)

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Levi et al. (1987) studied this question.

synapsesocial.com/papers/6a08ccb385b227e46401ea03 https://doi.org/10.1063/1.98784

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September 28, 1987Applied Physics Letters

Room-temperature operation of hot-electron transistors

View Full Paper

Ask AI

Bookmark

Authors

ALA. F. J. LeviSouthern California University for Professional Studies TCT. H. ChiuASML (United States)

Discussion

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Levi et al. (1987) studied this question.

synapsesocial.com/papers/6a08ccb385b227e46401ea03 https://doi.org/10.1063/1.98784

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