A calculation of the phonon-limited mobility of electrons confined to the channel of a GaAlAs/GaAs heterostructure has been performed with full account of the quasi-two-dimensionality of the channel. At 77 K the results show a reduction of mobility of about 25% as electron density increases from threshold to 7×1011cm−2; at room temperature the mobility of pure bulk GaAs is found almost independent of confinement.
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B. Vinter (1984) studied this question.
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