Influence of composition and structure on resistive switching properties of hafnium–titanium-oxide thin films grown by atomic layer deposition

Q: What does this research mean for the field?

Increasing the hafnium content in HfxTi1-xOy thin films promotes the formation of an orthorhombic structure, which increases the breakdown electric field strength, resistive switching memory window, and endurance. Novelty: ClaimNovelty.INCREMENTAL. Consensus alignment: ConsensusAlignment.NEUTRAL.

Toomas Daniel Viskus; Lauri Aarik; Tõnis Arroval; Aarne Kasikov; Joonas Merisalu; Jekaterina Kozlova; Markus Otsus; Hugo Mändar; Jaan Aarik; Guillermo Vinuesa; S. Dueñas; Helena Castán; Kaupo Kukli

doi:10.1039/d6tc00262e

January 1, 2026Journal of Materials Chemistry C

Influence of composition and structure on resistive switching properties of hafnium–titanium-oxide thin films grown by atomic layer deposition

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Key Points

The aim is to investigate how different compositions of hafnium-titanium-oxide films affect their resistive switching properties.
Studied hafnium-titanium-oxide films with varying compositions (0.07 ≤ x ≤ 0.64)
Examined the effects on electric field strength, switching memory window, and endurance
Increased x resulted in higher breakdown electric field strength.
Improved resistive switching memory window was observed with increasing orthorhombic structure.
Endurance also increased as the hafnium content rose.

Implication

Examines resistive switching properties in hafnium-titanium-oxide films, suggesting structural changes enhance performance.

Abstract

Resistive switching of Hf x Ti 1− x O y (0.07 ≤ x ≤ 0.64) films was studied. Increase in x , enabling formation of orthorhombic Hf x Ti 1− x O y , caused an increase in the breakdown electric field strength, resistive switching memory window, and endurance.

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Cite This Study

Viskus et al. (2026) studied this question.

synapsesocial.com/papers/6a095b1b7880e6d24efe0e88 https://doi.org/10.1039/d6tc00262e

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Influence of composition and structure on resistive switching properties of hafnium–titanium-oxide thin films grown by atomic layer deposition

Key Points

Implication

Abstract

Discussion

Cite This Study

Influence of composition and structure on resistive switching properties of hafnium–titanium-oxide thin films grown by atomic layer deposition

Key Points

Implication

Abstract

Discussion

Cite This Study

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