High-permittivity hafnium titanate (HfxTi1−xO2) films of various compositions have been investigated. Chemical-vapor deposited thin films have well-controlled composition and a smooth surface. Thicker films show large, highly anisotropic grains with their long axis in the plane of the film. Electrical measurements showed that the interfacial layer equivalent oxide thickness (EOT) decreases linearly with increasing Hf content. Electron energy-loss spectroscopy in scanning transmission electron microscopy indicates that the interfacial layer is primarily SiO2. In the composition range of 0.3
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Li et al. (2005) studied this question.
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