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September 15, 1981Applied Physics Letters

The effect of As/Ga flux ratio on the photoluminescent spectra from molecular beam epitaxially-grown Sn-doped AlxGa1−xAs

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Authors

WTW. T. TsangArup Group (United States)VSV. SwaminathanSree Balaji Dental College and Hospital

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Tsang et al. (1981) studied this question.

synapsesocial.com/papers/6a095bca00217ed3fb33f2achttps://doi.org/10.1063/1.92768
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  4. 4The effect of substrate temperature on the current threshold of GaAs-Al<i>x</i>Ga1−<i>x</i>As double-heterostructure lasers grown by molecular beam epitaxy1980 · 80 citations