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Reducing background oxygen, increasing substrate temperature, and lowering arsenic fluxes during molecular beam epitaxy growth significantly improves the luminescence of AlxGa1−xAs alloys, enabling strong exciton recombination and revealing carbon as the primary unintentional acceptor impurity. Novelty: ClaimNovelty.NOVEL_FINDING. Consensus alignment: ConsensusAlignment.NEUTRAL.

September 1, 1981Journal of Applied Physics

Photoluminescence of AlxGa1−xAs grown by molecular beam epitaxy

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GWG. W. WicksRensselaer Polytechnic Institute WWW. I. WangColumbia University CWC. E. C. WoodLawrence Livermore National Laboratory

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Wicks et al. (1981) studied this question.

synapsesocial.com/papers/6a095bca00217ed3fb33f2ad https://doi.org/10.1063/1.329470

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September 1, 1981Journal of Applied Physics

Photoluminescence of AlxGa1−xAs grown by molecular beam epitaxy

View Full Paper

Ask AI

Bookmark

Authors

GWG. W. WicksRensselaer Polytechnic Institute WWW. I. WangColumbia University CWC. E. C. WoodLawrence Livermore National Laboratory

Discussion

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Wicks et al. (1981) studied this question.

synapsesocial.com/papers/6a095bca00217ed3fb33f2ad https://doi.org/10.1063/1.329470

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