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The effect of quantum well width on the negative differential resistance (NDR) at 77 K of an InAlAs/InGaAs resonant tunneling barrier structure, lattice-matched to InP substrates and grown by MBE, was studied. The best NDR characteristics ever reported (peak-to-valley ratio of 11.4 with peak current density of 5.5×10 4 A/cm 2 ) have been achieved for a resonant tunneling barrier diode with a thin quantum well width of 44 Å. A reduction of electron effective mass in the InAlAs barrier layer was also observed.
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Muto et al. (1987) studied this question.
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