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We report on the low-temperature Molecular Beam Epitaxy (MBE) growth of single quantum well (SQW) GaAs/AlGaAs lasers under a low flux ratio. Lasing action was observed at a substrate temperature as low as 300°C. A threshold current density of 600 A/cm 2 was obtained at the substrate temperature of 375°C, which is the lowest threshold current density below 400°C reported so far.
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Miyazawa et al. (1991) studied this question.
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