The effect of group V/III flux ratio γ on the reliability of GaAs/Al0.3Ga0.7As double-heterostructure lasers grown by molecular beam epitaxy at 720 °C has been studied. The threshold current does not change with γ. By contrast, the degradation rate strongly depends on γ and it takes a minimum at γ∼3 where the photoluminescence intensity of the Al0.3Ga0.7As cladding layer is maximum. In the case of γ∼3, the degradation rate is lower than that of lasers grown by liquid phase epitaxy.
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Hayakawa et al. (1988) studied this question.
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