Three‐Dimensional Garment Architectures for Tactile Embodied Intelligence

Sensory‐neuromorphic computing endows wearable devices with capabilities of environmental perception and active service, acting as a pivotal driver for the revolution in human–computer interaction. However, its implementation in textile electronics is hampered by incompatibility between conventional electronic device structures and the fabric‐woven manufacturing methodology. Here, we demonstrate a tactile‐neuromorphic interface integrating a textile‐type resistive random‐access memory (RRAM) array for constructing human–machine sensing‐computing interactive systems. The 3D stacked TiO 2 /Ti 3 C 2 T x textile RRAM exhibits an order‐of‐magnitude reduction in switching voltage (85 mV) compared to prevailing counterparts, ultra‐stable resistive switching over 10 3 operation cycles with ultralow 1.15% LRS coefficient of variation, ideal for actualizing weavable neuromorphic computing. An all‐textile integrated near‐sensor computing system, featuring monolithically co‐integrated pressure sensor and RRAM arrays, demonstrates quasi‐linear conductance modulation under pressure stimuli, allowing for the embedded computation‐memory nodes knitted into garment textiles to achieve in situ tactile processing for contactless vehicular maneuvering. This work demonstrates the potential to integrate an embedded sensing‐logic‐memory electronic device into smart textiles, propelling a transformative paradigm shift in human–machine interaction.