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Wurtzite GaN epilayers grown on ZnO(0001) substrates by reactive molecular beam epitaxy exhibit high optical and structural quality, lacking the characteristic yellow photoluminescence band and showing significantly less misorientation than those grown on SiC and Al2O3. Novelty: ClaimNovelty.INCREMENTAL. Consensus alignment: ConsensusAlignment.NEUTRAL.

January 27, 1997Applied Physics Letters

Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy

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FHF. HamdaniMax Planck Institute for Solid State Research ABA. BotchkarevCentre National de la Recherche Scientifique WKW. KimYonsei University

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Hamdani et al. (1997) studied this question.

synapsesocial.com/papers/6a0ccd2ba4d785ea81625ae5 https://doi.org/10.1063/1.118183

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January 27, 1997Applied Physics Letters

Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy

View Full Paper

Ask AI

Bookmark

Authors

FHF. HamdaniMax Planck Institute for Solid State Research ABA. BotchkarevCentre National de la Recherche Scientifique WKW. KimYonsei University

Discussion

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Hamdani et al. (1997) studied this question.

synapsesocial.com/papers/6a0ccd2ba4d785ea81625ae5 https://doi.org/10.1063/1.118183

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