CdTe metal-semiconductor field-effect transistors

We report the first demonstration of CdTe metal-semiconductor field-effect transistors. These transistors were fabricated using n-type CdTe films grown by photoassisted molecular beam epitaxy. Using this new film deposition technique, it is possible to obtain highly activated n-type or p-type films suitable for device applications. In the present work, transistor structures with 5 or 100 μm gate lengths having channel dopings in the range from 2×1016 to 2×1017 cm−3 were fabricated and tested. The 5 μm gate devices have transconductances as large as 10 mS/mm and pinch-off voltages of 4.0 V.