Comparison of 4.5-kV Press-Pack IGBTs and IGCTs for Medium-Voltage Converters

Recently developed insulated-gate bipolar transistor (IGBT) press-pack (PP) devices with a blocking voltage of 4. 5 kV are being used in medium-voltage converters as an alternative to integrated gate-commutated thyristors (IGCTs). This paper presents an overview of PP packaging and both semiconductor technologies. A quantitative comparison of these devices is achieved through measurements for a 4. 5-kV 1. 2-kA IGBT and a 4. 5-kV 4-kA IGCT. The laboratory test bench for the switching transient characterization at a dc-link voltage of 2. 5 kV and currents up to 3 kA is described. Conduction, blocking, and switching behavior for junction temperatures up to 125 ^C are investigated. The IGCT and the IGBT are tested using a di/dt -limiting clamp circuit. In addition, the IGBT is tested in hard switching mode.