Data are presented demonstrating the room-temperature operation of an InP-InGaAs vertical cavity surface-emitting laser. The laser structure has an active region consisting of a 2-μm-thick bulk InGaAs layer and has an emission wavelength of 1.65 μm. Both the front and rear mirrors consist of quarter-wave stacks of four pairs of electron beam evaporated layers of Si and SiO2 which have been optimized for maximum reflectivity. The structures are characterized in the transmission mode using a pump beam from a Nd:YAG laser at 1.06 μm.
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Deppe et al. (1990) studied this question.
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