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This research aims to investigate how manganese doping influences the structural, optical, and electrical properties of zinc oxide thin films.

Investigation of the effect of manganese (Mn) doping on the structural, optical, and electrical properties of ZnO thin films

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Randomized trial examines how manganese doping affects properties of zinc oxide thin films, suggesting potential for applications.

This research aims to investigate how manganese doping influences the structural, optical, and electrical properties of zinc oxide thin films.
Thin films were deposited on glass substrates using a spray pneumatic technique at 420 °C.
X-ray diffraction analysis assessed crystallinity and structure.
Optical and electrical properties were measured to evaluate film performance.
Films showed a minimum crystallite size of 28.60 nm at 12% Mn doping.
Optical band gap increased from 3.342 eV to 3.386 eV as Mn concentration rose from 3% to 12%.
Electrical resistance increased significantly from 1.13 × 10^6 Ω to 2.13 × 10^6 Ω with higher Mn doping.

Charef et al. (2026) studied this question.

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