Electro-Thermal Improvement in a β-Ga2O3 Cage-Integrated Slanted-Fin MOSFET

Electro-thermal improvement is critical for β-Ga2O3 power devices to mitigate self-heating while maintaining high-voltage capability. Here, we propose a β-Ga2O3 cage-integrated slanted-fin MOSFET (C-SFMOSFET). By optimizing the cage-to-fin and cage-to-drain distances, the cage sequence simultaneously strengthens channel depletion and enhances heat dissipation in the gate-to-drain region. Compared with the baseline slanted-fin MOSFET (SFMOSFET), the proposed 4-cage C-SFMOSFET achieves a 1.75× higher Baliga’s figure of merit and reduces the peak junction temperature by 8 °C at 0.55 W/mm. These results indicate that the proposed device layout can effectively improve device-level electro-thermal performance and further exploit the inherent advantages of ultra-wide-bandgap β-Ga2O3.