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The disorder parameter k₅l for amorphous InOₗ is measured by a novel application of the surface electric field effect and is varied by thermal annealing. The normal-state conductivity and superconducting T₂ both vary as ({k₅l) }^-2 and critical disorder occurs at k₅l3^1{2}, as a result of Anderson localization in this low---carrier-density material.
Fiory et al. (Mon,) studied this question.