The disorder parameter kFl for amorphous InOₓ is measured by a novel application of the surface electric field effect and is varied by thermal annealing. The normal-state conductivity and superconducting Tc both vary as (kFl)^-2 and critical disorder occurs at kFl≈31/2, as a result of Anderson localization in this low---carrier-density material.
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Fiory et al. (1984) studied this question.