A high‐gain monolithic millimeter‐wave antenna has been designed, fabricated and tested at 222 GHz. The structure consists of a traveling‐wave antenna integrated on a 1.2‐μm dielectric membrane and suspended in a longitudinal cavity etched in a silicon wafer. A new traveling‐wave antenna design yields a wideband input impedance and a low cross‐polarization component in the E‐ and quasi‐H‐plane patterns. A directivity of 17.7 dB and a main‐beam efficiency of 88.5% are calculated from the 222‐GHz pattern measurements. The integrated corner‐reflector antenna is well suited for millimeter‐and submillimeter‐wave imaging applications in large f‐number systems.
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Gearhart et al. (1991) studied this question.
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