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September 16, 1991Applied Physics Letters

Reflective filters based on single-crystal GaN/AlxGa1−xN multilayers deposited using low-pressure metalorganic chemical vapor deposition

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MKM. Asif KhanAbdul Wali Khan University MardanJKJ. N. KuzniaOmega Optics (United States)JHJ. M. Van HoveOptica

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Khan et al. (1991) studied this question.

synapsesocial.com/papers/6a11fa32ccefb17cd5cccff9https://doi.org/10.1063/1.105284
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor deposition1991 · 174 citations
  2. 2High-finesse (Al,Ga)As interference filters grown by molecular beam epitaxy1988 · 36 citations
  3. 3Vertical-cavity, room-temperature stimulated emission from photopumped GaN films deposited over sapphire substrates using low-pressure metalorganic chemical vapor deposition1991 · 116 citations
  4. 4High electron mobility GaN/AlxGa1−xN heterostructures grown by low-pressure metalorganic chemical vapor deposition1991 · 179 citations
  5. 5Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer1990 · 199 citations